It is demonstrated that infrared photodetectors based on silicon with multicharged nanoclusters of manganese atoms can be designed that operate in the wavelength range of λ = 1.55–8 μm. Photodetectors fabricated on such materials have the following parameters: a spectral sensitivity range of λ = 1.55–8 μm, an operating temperature range of T = 77–250 K, an optimal electric field of E = 5 V/cm, an optimal size of V = 3 × 2 × 1 mm3, a sensitivity threshold of S = 10−9 W/cm2, and a response time of τ < 10−6 s.
Russian Microelectronics – Springer Journals
Published: Nov 6, 2012
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