Radiation defect formation in the course of the ion implantation of the FP-9120 positive photo-resist films is investigated. It is established that the radiation defect formation proceeds not only in the ion-deceleration region but also far from the region of the projected path of the Sb ions. Polymer was radiation-hardened over the entire film thickness, and this effect is pronounced stronger behind the incorporated layer of the ions. It is presumably caused by radiation linking. Ion implantation leads to lowering the microhardness near the photoresist/Si interface, which is caused by worsening of the adhesion interaction of a photopolymer film with silicon.
Russian Microelectronics – Springer Journals
Published: May 11, 2014
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud