Ion implantation of positive photoresists

Ion implantation of positive photoresists Radiation defect formation in the course of the ion implantation of the FP-9120 positive photo-resist films is investigated. It is established that the radiation defect formation proceeds not only in the ion-deceleration region but also far from the region of the projected path of the Sb ions. Polymer was radiation-hardened over the entire film thickness, and this effect is pronounced stronger behind the incorporated layer of the ions. It is presumably caused by radiation linking. Ion implantation leads to lowering the microhardness near the photoresist/Si interface, which is caused by worsening of the adhesion interaction of a photopolymer film with silicon. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Ion implantation of positive photoresists

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971401003X
Publisher site
See Article on Publisher Site

Abstract

Radiation defect formation in the course of the ion implantation of the FP-9120 positive photo-resist films is investigated. It is established that the radiation defect formation proceeds not only in the ion-deceleration region but also far from the region of the projected path of the Sb ions. Polymer was radiation-hardened over the entire film thickness, and this effect is pronounced stronger behind the incorporated layer of the ions. It is presumably caused by radiation linking. Ion implantation leads to lowering the microhardness near the photoresist/Si interface, which is caused by worsening of the adhesion interaction of a photopolymer film with silicon.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 11, 2014

References

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