The results of the computational-experimental investigations of high-frequency and noise properties of SOI MOS transistors and passive elements of 0.35-μm domestic digital CMOS SOI technology are presented. New elements absent in the library composition and necessary to construct the monolithic microwave functional blocks are constructed. The results of design and experimental investigations of the crystals of generating, amplifying, and mixing functional units with operational frequencies of 1.2–1.65 GHz are presented. Based on the results of analysis of the computational-experimental simulation, the possibility in principle to design the monolithic LSI of the radio receiver of satellite navigation based on the domestic CMOS SOI technology with frequencies of 1.2–1.6 GHz and hardness levels up to 1012 unit/s and 106 units is confirmed.
Russian Microelectronics – Springer Journals
Published: Jul 12, 2012
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