ISSN 10637397, Russian Microelectronics, 2015, Vol. 44, No. 7, pp. 463–467. © Pleiades Publishing, Ltd., 2015.
Original Russian Text © D.V. Bykov, F.I. Grigor’ev, A.P. Lysenko, N.I. Strogankova, 2014, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2014, No. 1(105),
A bishifted junction with injection instability
(BISPIN) is a functional element of microelectronics
wherein the properties of a photodetector and genera
tor are integrated so that it converts the incident light
flux into a regular sequence of pulses with a sufficiently
large amplitude of the current [1–4]. In this case, the
pulse repetition frequency in certain modes is propor
tional to the light flux and the device can serve as a
light flux sensor.
A good start in developing BISPIN devices and
their applications in various areas related to the optical
radiation photoreception was made. Using the crystals
of BISPIN photodetectors one can create optron con
verters with frequency output having one or more light
emitting diodes (LEDs). The sensitivity of such optrons
by the input ranges within the range of 1–100
which ensures their management using CMOS cir
cuits. In turn, the output of BISPIN optrons can be
easily adjusted to the TTL level. In the BISPIN unit
one can identify the fragments of the structure, which
play the role of known semiconductor devices, such as
the bipolar transistor, field effect transistor with con
junction, thyristor, rectifier diode, photo
diode, and varactor. Therefore, these structures con
tinue to be studied and the results of these studies are
widely used .
Figure 1 shows the design of the BISPIN structure
, the scheme of its commutation, and the shape of
the pulses of the current generated in the structure in
the mode of pulsations.
As shown in , there are three different states of
the BISPIN structure: the stationary state with low
conductivity; the steady state with relatively high con
ductivity; and the state in which the current flowing
through the structure is oscillating.
Under certain threshold conditions, the closed
state of the BISPIN structure becomes unstable and
the structure switches to a conducting state like an
avalanche. If the device is in the mode of an oscillating
Investigation of the Physical Processes in BISPIN Structures
in Pulsation Mode
D. V. Bykov, F. I. Grigor’ev, A. P. Lysenko, and N. I. Strogankova
Moscow State Institute of Electronics and Mathematics, National Research University High School of Economics,
Received July 18, 2013
—The mechanisms of the formation of the peak value of the electronic component of the total cur
rent through a BISPINdevice in various modes of pulsation are considered. The results of the experimental
and theoretical studies of the electronic component of the current through the structure on the supply voltage
and load resistance are given. A theoretical model to explain the observed dependence is proposed. A good
agreement between the calculated and experimental results is obtained.
: BISPIN device, current oscillations, sensor of light flux
The design of the BISPIN structure (a) and the
shape of current pulses in the pulsation mode (b).