Investigation of magnetotransistors with new topology

Investigation of magnetotransistors with new topology Sensitivity of a lateral magnetotransistor with orthogonal charge carrier flows is investigated by means of device-technological simulation. The comparison of the simulation results for parallel carrier flows shows the change of the sensitivity sign in a magnetotransistor with the base in the form of a diffusion well. In a planar magnetotransistor, the initial offset of collector voltages is shown by experiments to depend on the topology of emitter electrodes, collectors, and the heavily-doped base contact. The investigated topologies of the lateral and planar magnetotransistors allow one to create a low initial offset of collector voltages and increase the sensitivity. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Investigation of magnetotransistors with new topology

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715020043
Publisher site
See Article on Publisher Site

Abstract

Sensitivity of a lateral magnetotransistor with orthogonal charge carrier flows is investigated by means of device-technological simulation. The comparison of the simulation results for parallel carrier flows shows the change of the sensitivity sign in a magnetotransistor with the base in the form of a diffusion well. In a planar magnetotransistor, the initial offset of collector voltages is shown by experiments to depend on the topology of emitter electrodes, collectors, and the heavily-doped base contact. The investigated topologies of the lateral and planar magnetotransistors allow one to create a low initial offset of collector voltages and increase the sensitivity.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 4, 2015

References

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