Sensitivity of a lateral magnetotransistor with orthogonal charge carrier flows is investigated by means of device-technological simulation. The comparison of the simulation results for parallel carrier flows shows the change of the sensitivity sign in a magnetotransistor with the base in the form of a diffusion well. In a planar magnetotransistor, the initial offset of collector voltages is shown by experiments to depend on the topology of emitter electrodes, collectors, and the heavily-doped base contact. The investigated topologies of the lateral and planar magnetotransistors allow one to create a low initial offset of collector voltages and increase the sensitivity.
Russian Microelectronics – Springer Journals
Published: Mar 4, 2015
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