Investigation of electrical properties of MOS structures with silicon nitride films doped with rare earth elements

Investigation of electrical properties of MOS structures with silicon nitride films doped with... One of the main problems of MOS devices in electronics is improving the stability of their characteristics. This problem is considered in this work. This solution is ensured by a decrease in the density of the surface states due to the use of silicon nitride films doped with rare earth elements as a tunneling and barrier layer and due to use of SiGe and Ge solid solutions as a storage medium of nanoclusters. CV-studies of the electrophysical parameters of MOS structures of Me-Si3N4 (rare earth elements)-Ge(SiGe)-Si3N4 (rare earth elements)-nSi nanoclusters, where rare earth elements with a different atomic radius are used as alloying components, are performed. The regularity of the influence of the atomic radius of rare earth elements on the electrical characteristics of MOS structures is revealed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Investigation of electrical properties of MOS structures with silicon nitride films doped with rare earth elements

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714040040
Publisher site
See Article on Publisher Site

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