# Investigation of breakdown performance in $$L_{g}$$ L g = 20nm novel asymmetric InP HEMTs for future high-speed high-power applications

Investigation of breakdown performance in $$L_{g}$$ L g = 20nm novel asymmetric InP HEMTs... In this paper, we investigated the breakdown performance of novel nanoscale asymmetric InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP HEMT features $$\Gamma$$ Γ -gate, heavily doped multilayer cap, $$n^{+}$$ n + -type In $$_{0.52}$$ 0.52 Ga $$_{0.48}$$ 0.48 As source/drain (S/D) regions, InAs-rich composite channel, SiN passivation and double $$\delta$$ δ -doping planes. The impact of asymmetric gate recess width on DC, RF and breakdown performance of novel asymmetric InP HEMT has been investigated using hydrodynamic carrier transport model along with other physical models such as Shockley–Read–Hall model, recombination models, high-field mobility model and density gradient model. Sentaurus TCAD simulations were carried out at room temperature for gate lengths of 50 and 20 nm in order to analyse the scalability of the new device architecture. In order to consider the quantum effects at nanoscale regime, density gradient model of eQuantum potential was used for TCAD simulations. $$L_{g}$$ L g = 20 nm proposed HEMT achieved a peak $$g_{m}$$ g m and $$I_\mathrm{DS}$$ I DS of 3470 mS/mm and 1300 mA/mm, respectively. The proposed HEMT has a $$f_{T}$$ f T and $$f_\mathrm{max}$$ f max of 749 and 1460 GHz, respectively. The $$L_{g}$$ L g = 20 nm proposed HEMT also showed an ON-state and OFF-state breakdown voltages of 2.2 and 4.5 V, respectively, at a gate recess width of 150 nm. To the best of authors’ knowledge, this is the record combination of DC, RF and breakdown performance reported for InP HEMTs which makes them the most suitable transistors for future high-speed high-power applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

# Investigation of breakdown performance in $$L_{g}$$ L g = 20nm novel asymmetric InP HEMTs for future high-speed high-power applications

, Volume 17 (1) – Oct 6, 2017
8 pages

/lp/springer_journal/investigation-of-breakdown-performance-in-l-g-l-g-20nm-novel-BZFgQAq1jz
Publisher
Springer US
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1086-4
Publisher site
See Article on Publisher Site

### Abstract

In this paper, we investigated the breakdown performance of novel nanoscale asymmetric InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP HEMT features $$\Gamma$$ Γ -gate, heavily doped multilayer cap, $$n^{+}$$ n + -type In $$_{0.52}$$ 0.52 Ga $$_{0.48}$$ 0.48 As source/drain (S/D) regions, InAs-rich composite channel, SiN passivation and double $$\delta$$ δ -doping planes. The impact of asymmetric gate recess width on DC, RF and breakdown performance of novel asymmetric InP HEMT has been investigated using hydrodynamic carrier transport model along with other physical models such as Shockley–Read–Hall model, recombination models, high-field mobility model and density gradient model. Sentaurus TCAD simulations were carried out at room temperature for gate lengths of 50 and 20 nm in order to analyse the scalability of the new device architecture. In order to consider the quantum effects at nanoscale regime, density gradient model of eQuantum potential was used for TCAD simulations. $$L_{g}$$ L g = 20 nm proposed HEMT achieved a peak $$g_{m}$$ g m and $$I_\mathrm{DS}$$ I DS of 3470 mS/mm and 1300 mA/mm, respectively. The proposed HEMT has a $$f_{T}$$ f T and $$f_\mathrm{max}$$ f max of 749 and 1460 GHz, respectively. The $$L_{g}$$ L g = 20 nm proposed HEMT also showed an ON-state and OFF-state breakdown voltages of 2.2 and 4.5 V, respectively, at a gate recess width of 150 nm. To the best of authors’ knowledge, this is the record combination of DC, RF and breakdown performance reported for InP HEMTs which makes them the most suitable transistors for future high-speed high-power applications.

### Journal

Journal of Computational ElectronicsSpringer Journals

Published: Oct 6, 2017

## You’re reading a free preview. Subscribe to read the entire article.

### DeepDyve is your personal research library

It’s your single place to instantly
that matters to you.

over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month ### Explore the DeepDyve Library ### Unlimited reading Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere. ### Stay up to date Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates. ### Organize your research It’s easy to organize your research with our built-in tools. ### Your journals are on DeepDyve Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more. All the latest content is available, no embargo periods. ### DeepDyve Freelancer ### DeepDyve Pro Price FREE$49/month

\$360/year
Save searches from Google Scholar, PubMed
Create lists to organize your research
Export lists, citations