Investigation into the selectivity of etching various materials by fast neutral particle beams

Investigation into the selectivity of etching various materials by fast neutral particle beams The results of an investigation into the etching rate and selectivity of silicon substrates, as well as SiO2, W, TiN, TiC, and NbN films, with the use of chemically active compounds CF4, C3F6, and SF6 as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to SiO2 in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Investigation into the selectivity of etching various materials by fast neutral particle beams

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714060067
Publisher site
See Article on Publisher Site

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