The results of an investigation into the etching rate and selectivity of silicon substrates, as well as SiO2, W, TiN, TiC, and NbN films, with the use of chemically active compounds CF4, C3F6, and SF6 as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to SiO2 in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region.
Russian Microelectronics – Springer Journals
Published: Nov 12, 2014
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