Investigation into the processes of plasmachemical etching of a photoresist with the help of in situ optical monitoring

Investigation into the processes of plasmachemical etching of a photoresist with the help of in... The peculiarities of photoresist etching in inductively coupled plasma in various modes, including the mode using to etch the GaN-based structures are investigated. The continuous in situ monitoring of the photoresist thickness, surface morphology, and substrate temperature was performed with the help of the optical reflectometry and low-coherent interferometry. It is shown that the etch rate of photoresist is not constant but decreases in the course of the process, which is in addition associated with the substrate heating. It is revealed that the pulsed etching mode makes it possible to exclude the development of the roughness observed in the continuous mode. The comparison of the new data with the etch rates of the photoresist with the characteristic rates of GaN etching performed under the same conditions made it possible to determine the process parameters and photoresist thickness necessary to perform the mentioned etching process in the optimal mode. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Investigation into the processes of plasmachemical etching of a photoresist with the help of in situ optical monitoring

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716060093
Publisher site
See Article on Publisher Site

Abstract

The peculiarities of photoresist etching in inductively coupled plasma in various modes, including the mode using to etch the GaN-based structures are investigated. The continuous in situ monitoring of the photoresist thickness, surface morphology, and substrate temperature was performed with the help of the optical reflectometry and low-coherent interferometry. It is shown that the etch rate of photoresist is not constant but decreases in the course of the process, which is in addition associated with the substrate heating. It is revealed that the pulsed etching mode makes it possible to exclude the development of the roughness observed in the continuous mode. The comparison of the new data with the etch rates of the photoresist with the characteristic rates of GaN etching performed under the same conditions made it possible to determine the process parameters and photoresist thickness necessary to perform the mentioned etching process in the optimal mode.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 11, 2017

References

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