Investigation into the plasma formation of polysilicon interconnections on a complex relief

Investigation into the plasma formation of polysilicon interconnections on a complex relief The results of investigations into the formation process of polysilicon elements in the presence of a complex relief in the form of silicon islands in a silicon-on-insulator (SOI) structure are presented. The optimal production parameters of the process are found and their determining physicochemical mechanisms are described. A novel organization concept of vacuum-plasma etching of polysilicon elements in the presence of a complex relief is proposed. Reactive-ion etching of polysilicon elements during the formation of the structures of circuits with elevated radiation resistance, such as SOI, is developed and optimized. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Investigation into the plasma formation of polysilicon interconnections on a complex relief

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715070070
Publisher site
See Article on Publisher Site

Abstract

The results of investigations into the formation process of polysilicon elements in the presence of a complex relief in the form of silicon islands in a silicon-on-insulator (SOI) structure are presented. The optimal production parameters of the process are found and their determining physicochemical mechanisms are described. A novel organization concept of vacuum-plasma etching of polysilicon elements in the presence of a complex relief is proposed. Reactive-ion etching of polysilicon elements during the formation of the structures of circuits with elevated radiation resistance, such as SOI, is developed and optimized.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2015

References

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