The results of investigations into the formation process of polysilicon elements in the presence of a complex relief in the form of silicon islands in a silicon-on-insulator (SOI) structure are presented. The optimal production parameters of the process are found and their determining physicochemical mechanisms are described. A novel organization concept of vacuum-plasma etching of polysilicon elements in the presence of a complex relief is proposed. Reactive-ion etching of polysilicon elements during the formation of the structures of circuits with elevated radiation resistance, such as SOI, is developed and optimized.
Russian Microelectronics – Springer Journals
Published: Nov 14, 2015
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