Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor

Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in... The influence of the temperature gradient on the diffusion of boron, phosphorus, and arsenic during annealing of silicon in a nonisothermal lamp reactor in the second and minute ranges is investigated experimentally and theoretically. Parameters of the thermodiffusion process are determined: for the boron diffusion in the second range, the effective diffusivity D eff ∼ 10−12 cm2/s and the effective measured heat of transport Q meff * ∼ 103–104 eV. The results are interpreted based on the equations of nonequilibrium thermodynamics. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714030056
Publisher site
See Article on Publisher Site

Abstract

The influence of the temperature gradient on the diffusion of boron, phosphorus, and arsenic during annealing of silicon in a nonisothermal lamp reactor in the second and minute ranges is investigated experimentally and theoretically. Parameters of the thermodiffusion process are determined: for the boron diffusion in the second range, the effective diffusivity D eff ∼ 10−12 cm2/s and the effective measured heat of transport Q meff * ∼ 103–104 eV. The results are interpreted based on the equations of nonequilibrium thermodynamics.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 15, 2014

References

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