The influence of the temperature gradient on the diffusion of boron, phosphorus, and arsenic during annealing of silicon in a nonisothermal lamp reactor in the second and minute ranges is investigated experimentally and theoretically. Parameters of the thermodiffusion process are determined: for the boron diffusion in the second range, the effective diffusivity D eff ∼ 10−12 cm2/s and the effective measured heat of transport Q meff * ∼ 103–104 eV. The results are interpreted based on the equations of nonequilibrium thermodynamics.
Russian Microelectronics – Springer Journals
Published: Jul 15, 2014
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