ISSN 1063-7397, Russian Microelectronics, 2009, Vol. 38, No. 1, p. 1. © Pleiades Publishing, Ltd., 2009.
Original Russian Text © The Editorial Board, 2009, published in Mikroelektronika, 2009, Vol. 38, No. 1, p. 3.
Simulation and Analysis of Radiation Effects in Microelectronic Devices
In connection with the expansion of the development and production of submicron VLSI circuits in Russia, the
necessity of analyzing their radiation stability to types of radiation environment of varying character involving the
effect of separate nuclear particles appears. Therefore, the need arises for further development of the methods and
means of evaluation and prediction of radiation stability of modern microelectronics articles of high functional sta-
bility performed by submicron rates.
This cycle of articles is a continuation of a cycle of works published in
no. 2, 2004;
no. 3, 2006; and no. 1, 2008.
In the series of articles called to your attention, the results of practical approbation of laser imitation methods
of simulation of dose rate effects in integrated circuits and semiconductor devices are considered. The effect of
surface recombination on radiation resistance of bipolar microcircuits is analyzed. A mathematical tool for analy-
sis of the radiation behavior of integrated circuits at the functional–logic level is given and considered.
Special attention is paid to the questions of the use of submicron CMOS VLSI circuits in faulty resistant devices
operating under the effect of atmospheric neutrons and extreme thermal modes.
The presented articles reﬂect modern tendencies in the development of investigations in the ﬁeld of analysis
and monitoring of radiation stability of submicron articles of microelectronics based on wide use of numerical
methods of simulation and imitation effects.
Introduction to the Cycle of Articles Devoted to Methods
and Means of Evaluation and Prediction of Radiation Stability
of Submicron Articles of Microelectronics