Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over... The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Physics Journal Springer Journals

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Physics; Physics, general; Optics, Lasers, Photonics, Optical Devices; Condensed Matter Physics; Nuclear Physics, Heavy Ions, Hadrons; Theoretical, Mathematical and Computational Physics
ISSN
1064-8887
eISSN
1573-9228
D.O.I.
10.1007/s11182-018-1387-5
Publisher site
See Article on Publisher Site

Abstract

The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.

Journal

Russian Physics JournalSpringer Journals

Published: Jun 4, 2018

References

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