Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation Direct synthesis of monolayer graphene on arbitrary substrate (such as SiO2, Al2O3, glass, and Si3N4) is demonstrated through a universal and controllable approach, i.e., carbon ion implantation technique. By tuning the implantation energy to precisely implant carbon ions into the thin Ni film, which is pre-deposited on the objective substrate, followed by post-annealing and fast-cooling processes, monolayer graphene films are directly synthesized on the arbitrary objective substrate. Micro-Raman spectroscopy, STM, and TEM are cooperatively utilized to verify that the synthesized graphene is monolayer with high quality. Moreover, field-effect transistors are fabricated with the directly synthesized monolayer graphene on SiO2/Si substrate to reveal the corresponding electrical properties. This study provides an avenue for direct growth of graphene on arbitrary substrate, which offers more flexibility in the experimental conditions, especially the experimental atmosphere. In addition, involving the ion implantation technique may pave the way for wafer-scale graphene synthesis, thus benefitting the application of graphene in micro-/nano-electronic field. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Springer Journals

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Materials Science; Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics
ISSN
0022-2461
eISSN
1573-4803
D.O.I.
10.1007/s10853-017-1710-5
Publisher site
See Article on Publisher Site

Abstract

Direct synthesis of monolayer graphene on arbitrary substrate (such as SiO2, Al2O3, glass, and Si3N4) is demonstrated through a universal and controllable approach, i.e., carbon ion implantation technique. By tuning the implantation energy to precisely implant carbon ions into the thin Ni film, which is pre-deposited on the objective substrate, followed by post-annealing and fast-cooling processes, monolayer graphene films are directly synthesized on the arbitrary objective substrate. Micro-Raman spectroscopy, STM, and TEM are cooperatively utilized to verify that the synthesized graphene is monolayer with high quality. Moreover, field-effect transistors are fabricated with the directly synthesized monolayer graphene on SiO2/Si substrate to reveal the corresponding electrical properties. This study provides an avenue for direct growth of graphene on arbitrary substrate, which offers more flexibility in the experimental conditions, especially the experimental atmosphere. In addition, involving the ion implantation technique may pave the way for wafer-scale graphene synthesis, thus benefitting the application of graphene in micro-/nano-electronic field.

Journal

Journal of Materials ScienceSpringer Journals

Published: Nov 1, 2017

References

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