Integrated Laser Measuring System for the Ellipsometric and Photovoltage Characterization of Thin Surface Layers

Integrated Laser Measuring System for the Ellipsometric and Photovoltage Characterization of Thin... An integrated computer-based measuring system is designed, assembled, and tested that combines ellipsometry with photovoltage measurements, using a semiconductor laser as the light source. It enables one to simultaneously measure the thickness and photovoltage-related properties of a micrometer-sized region selected in a thin surface layer. The system also gives computer-generated perspective images of the region examined. Both phase and intensity light modulation are provided by an electro-optical modulator operated over a wide frequency range. It is established that combining the two measurement techniques is a useful method for (i) detecting microscopic surface defects which cannot be revealed by purely optical methods and (ii) evaluating the semiconductor properties of thin surface layers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Integrated Laser Measuring System for the Ellipsometric and Photovoltage Characterization of Thin Surface Layers

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1027346027904
Publisher site
See Article on Publisher Site

Abstract

An integrated computer-based measuring system is designed, assembled, and tested that combines ellipsometry with photovoltage measurements, using a semiconductor laser as the light source. It enables one to simultaneously measure the thickness and photovoltage-related properties of a micrometer-sized region selected in a thin surface layer. The system also gives computer-generated perspective images of the region examined. Both phase and intensity light modulation are provided by an electro-optical modulator operated over a wide frequency range. It is established that combining the two measurement techniques is a useful method for (i) detecting microscopic surface defects which cannot be revealed by purely optical methods and (ii) evaluating the semiconductor properties of thin surface layers.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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