Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by their charge trap

Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by... A conceptually new method for the measurement of parameters of energy levels in the semiconductor bandgap from 0.07 to 0.4 eV is proposed. The method is based on integrating the relaxing charge of these levels and differentiating the charge integral by modulating the width of the time window of a bias voltage pulse with a small amplitude. The mathematical basis of the proposed method is described. The mathematical relations used allow one to model the temperature spectrum of energy levels. It is demonstrated that the energy position of a deep level may be determined in one temperature scanning pass, thus simplifying the experiments. The energy levels in a green light-emitting-diode structure based on AlGaN/InGaN/GaN were studied experimentally. The ΔE t = 0.14 ± 0.01 and ΔE t = 0.2 ± 0.015 eV levels that presumably belong to V Ga and Mg, respectively, were revealed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by their charge trap

Loading next page...
 
/lp/springer_journal/integrated-differential-method-of-thermal-spectroscopy-of-energy-ysHDvrm50q
Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714080083
Publisher site
See Article on Publisher Site

Abstract

A conceptually new method for the measurement of parameters of energy levels in the semiconductor bandgap from 0.07 to 0.4 eV is proposed. The method is based on integrating the relaxing charge of these levels and differentiating the charge integral by modulating the width of the time window of a bias voltage pulse with a small amplitude. The mathematical basis of the proposed method is described. The mathematical relations used allow one to model the temperature spectrum of energy levels. It is demonstrated that the energy position of a deep level may be determined in one temperature scanning pass, thus simplifying the experiments. The energy levels in a green light-emitting-diode structure based on AlGaN/InGaN/GaN were studied experimentally. The ΔE t = 0.14 ± 0.01 and ΔE t = 0.2 ± 0.015 eV levels that presumably belong to V Ga and Mg, respectively, were revealed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 26, 2014

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from
Google Scholar,
PubMed
Create lists to
organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off