An installation for etching and depositing thin-film structures equipped with a Neitral-L original source, which forms a ribbon beam of rapid neutral particles obtained when using various working gases, is developed. A system for the source neutralization and separation ensures hundred-percent beam neutralization. In order to increase the treatment uniformity of the substrates, a system with a programmable controller of the reciprocal motion of the substrate holder relative to the ribbon beam is built-in into the processing chamber of the installation. The technical possibilities of the installation are investigated experimentally. The etching and deposition processes of materials are performed when using various working gases.
Russian Microelectronics – Springer Journals
Published: Sep 2, 2015
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