An experimental investigation is conducted into the initial stage of deposition for semiinsulating polycrystalline silicon (SIPOS) versus undoped polycrystalline silicon, with the N2O-to-SiH4 flow-rate ratios ranging from 0 to 0.23. It is shown that adding N2O to SiH4 does not change the pattern of the process. The initial stage is found to consist of a period of island growth followed by a period of coalescence, ending with the formation of a continuous film. Islands arise with a horizontal size of up to 95 nm. The minimum thickness of a continuous film is about 5 nm for SIPOS as against 22 ± 4 nm for undoped polycrystalline silicon.
Russian Microelectronics – Springer Journals
Published: Nov 8, 2008
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