Initial stage of semiinsulating polycrystalline silicon film growth

Initial stage of semiinsulating polycrystalline silicon film growth An experimental investigation is conducted into the initial stage of deposition for semiinsulating polycrystalline silicon (SIPOS) versus undoped polycrystalline silicon, with the N2O-to-SiH4 flow-rate ratios ranging from 0 to 0.23. It is shown that adding N2O to SiH4 does not change the pattern of the process. The initial stage is found to consist of a period of island growth followed by a period of coalescence, ending with the formation of a continuous film. Islands arise with a horizontal size of up to 95 nm. The minimum thickness of a continuous film is about 5 nm for SIPOS as against 22 ± 4 nm for undoped polycrystalline silicon. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Initial stage of semiinsulating polycrystalline silicon film growth

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739708060012
Publisher site
See Article on Publisher Site

Abstract

An experimental investigation is conducted into the initial stage of deposition for semiinsulating polycrystalline silicon (SIPOS) versus undoped polycrystalline silicon, with the N2O-to-SiH4 flow-rate ratios ranging from 0 to 0.23. It is shown that adding N2O to SiH4 does not change the pattern of the process. The initial stage is found to consist of a period of island growth followed by a period of coalescence, ending with the formation of a continuous film. Islands arise with a horizontal size of up to 95 nm. The minimum thickness of a continuous film is about 5 nm for SIPOS as against 22 ± 4 nm for undoped polycrystalline silicon.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 8, 2008

References

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