Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures The influence of the silicon epitaxial layer’s peculiarities and the silicon–sapphire interface in the silicon-on-sapphire (SOS) structure on the capacitance parameters of MIS-structures formed on SOS with submicron layers of silicon has been studied. The presence of a strong frequency dependence of the capacitance characteristics in test MIS-structures formed on such SOS is revealed in the studies. It is shown experimentally that the C–V-characteristics of the test structures to a significant degree are determined by the size and configuration of the silicon layer of MIS-structures and the concentration of deep compensating levels in the boundary layer at the Si–sapphire interface. In particular, it is shown that substantial changes in the frequency–capacitance dependences by transferring from the test formed on the standard SOS to the tests on SOS with a recrystallized silicon layer are associated with the presence of a great concentration of deep compensating levels in the boundary layer at the silicon–sapphire interface for standard SOS-structures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971508003X
Publisher site
See Article on Publisher Site

Abstract

The influence of the silicon epitaxial layer’s peculiarities and the silicon–sapphire interface in the silicon-on-sapphire (SOS) structure on the capacitance parameters of MIS-structures formed on SOS with submicron layers of silicon has been studied. The presence of a strong frequency dependence of the capacitance characteristics in test MIS-structures formed on such SOS is revealed in the studies. It is shown experimentally that the C–V-characteristics of the test structures to a significant degree are determined by the size and configuration of the silicon layer of MIS-structures and the concentration of deep compensating levels in the boundary layer at the Si–sapphire interface. In particular, it is shown that substantial changes in the frequency–capacitance dependences by transferring from the test formed on the standard SOS to the tests on SOS with a recrystallized silicon layer are associated with the presence of a great concentration of deep compensating levels in the boundary layer at the silicon–sapphire interface for standard SOS-structures.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 21, 2015

References

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