Influence of the pressure of the gas medium and duration of controlling pulses on the stability of characteristics of memory cells based on electroformed Si-SiO2-W structures

Influence of the pressure of the gas medium and duration of controlling pulses on the stability... The results of experimental investigations of the effect of air pressure and the duration of the voltage pulse on the current-voltage characteristics and stability of the switching process in electroformed open Si-SiO2-W sandwich-structures are presented. It is shown that the mechanism of disappearance of the particles of the conducting phase (PCP) formed during electroforming of the surface layers of silicon dioxide is their (silicon atoms) repeated oxidation by oxygen from the gas phase over the structure. In this case, the width of the insulating spacing in the conducting medium formed of PCPs, which specifies the conductivity of the electroformed structure, is determined by the balance of processes of formation of PCPs under the effect of the electron flux and their thermally activated disappearance, which is shifted towards the latter as the oxygen pressure in the gas phase increases. The existence of an optimal pressure, at which the limiting number of rewriting cycles of the memory cell based on the Si-SiO2-W structure is maximal and can reach 106 in the case of using short controlling voltage pulses, is shown. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of the pressure of the gas medium and duration of controlling pulses on the stability of characteristics of memory cells based on electroformed Si-SiO2-W structures

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Publisher
Springer Journals
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710050033
Publisher site
See Article on Publisher Site

Abstract

The results of experimental investigations of the effect of air pressure and the duration of the voltage pulse on the current-voltage characteristics and stability of the switching process in electroformed open Si-SiO2-W sandwich-structures are presented. It is shown that the mechanism of disappearance of the particles of the conducting phase (PCP) formed during electroforming of the surface layers of silicon dioxide is their (silicon atoms) repeated oxidation by oxygen from the gas phase over the structure. In this case, the width of the insulating spacing in the conducting medium formed of PCPs, which specifies the conductivity of the electroformed structure, is determined by the balance of processes of formation of PCPs under the effect of the electron flux and their thermally activated disappearance, which is shifted towards the latter as the oxygen pressure in the gas phase increases. The existence of an optimal pressure, at which the limiting number of rewriting cycles of the memory cell based on the Si-SiO2-W structure is maximal and can reach 106 in the case of using short controlling voltage pulses, is shown.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 24, 2010

References

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