Influence of radiation defects on diffusion of arsenic and antimony in implanted silicon

Influence of radiation defects on diffusion of arsenic and antimony in implanted silicon Diffusion of implanted Sb and As in silicon layers with various contents of radiation defects is investigated during furnace thermal annealing and rapid thermal annealing (RTA). The defect concentration was varied by the additional introduction of Si+ ions. As the defect concentration in the layer increases, the antimony diffusivity increases both during lamp annealing and during furnace thermal annealing, which is governed by diffusion over excess vacancies. The As diffusivity increases with an increase in the concentration of radiation defects in the layer during the lamp annealing and decreases during furnace thermal annealing. The increase in the As diffusivity during RTA is attributed to interstitial Si atoms. The observed decrease in the As diffusivity is caused by the impurity capture by excess vacancies as the traps. However, at defect concentrations much higher than the impurity concentration, the As diffusivity increases but remains substantially lower than the intrinsic value. It follows from the results that the rate of intrinsic As diffusion along the interstitial channel is higher than along the vacancy channel. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of radiation defects on diffusion of arsenic and antimony in implanted silicon

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712020059
Publisher site
See Article on Publisher Site

Abstract

Diffusion of implanted Sb and As in silicon layers with various contents of radiation defects is investigated during furnace thermal annealing and rapid thermal annealing (RTA). The defect concentration was varied by the additional introduction of Si+ ions. As the defect concentration in the layer increases, the antimony diffusivity increases both during lamp annealing and during furnace thermal annealing, which is governed by diffusion over excess vacancies. The As diffusivity increases with an increase in the concentration of radiation defects in the layer during the lamp annealing and decreases during furnace thermal annealing. The increase in the As diffusivity during RTA is attributed to interstitial Si atoms. The observed decrease in the As diffusivity is caused by the impurity capture by excess vacancies as the traps. However, at defect concentrations much higher than the impurity concentration, the As diffusivity increases but remains substantially lower than the intrinsic value. It follows from the results that the rate of intrinsic As diffusion along the interstitial channel is higher than along the vacancy channel.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 28, 2012

References

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