Influence of optical properties of the SOI structure on the wafer temperature during rapid thermal annealing

Influence of optical properties of the SOI structure on the wafer temperature during rapid... Optical characteristics are compared theoretically, and temperature differences of the Si wafer with the B-doped SOI structure and substrate wafer are evaluated during rapid thermal annealing. It is shown that under identical annealing conditions and temperatures above 800 K, the difference in their temperatures can reach ∼30 K. We studied the dependence of the total emissivity and temperature of the wafer with the SOI structure on the concentration of the doping impurity in the Si layer. The method of the quantitative analysis of variations of the wafer temperature under invariable annealing conditions depending on the variations of emissivity of its surfaces is suggested. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of optical properties of the SOI structure on the wafer temperature during rapid thermal annealing

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712010106
Publisher site
See Article on Publisher Site

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