Influence of ionizing radiation on the parameters of an operational amplifier based on complementary bipolar transistors

Influence of ionizing radiation on the parameters of an operational amplifier based on... The influence of a 4 MeV energy electron flux and 60Co gamma radiation with an average energy of 1.25 MeV on the characteristics of silicon complementary bipolar transistors (BTs) and a wide-band operational amplifier (OA) has been studied. It is established that an action of F E = 3×1014 el/cm2 electron fluence causes a decay in the common–emitter current gain (ß) of 61% for NPN and 66% for PNP transistors, as well as a decrease in the maximum value of the transition frequency (f T) of 12% for NPN and by 4% for PNP transistors. When the absorbed dose D G amounts to 3 Mrad, a decrease in ß by 39% for NPN and by 44% for PNP transistors, and in f T of 10% for NPN and 11% for PNP transistors is observed. Despite the substantial decay in ß of transistors, the OA circuitry provided the retention of the operation speed and a small decrease in the offset voltage (about 1.5 mV) in the irradiation range mentioned. The circuitries of OA cascades and the experimental characteristics of the BTs and OAs are presented. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of ionizing radiation on the parameters of an operational amplifier based on complementary bipolar transistors

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716010030
Publisher site
See Article on Publisher Site

Abstract

The influence of a 4 MeV energy electron flux and 60Co gamma radiation with an average energy of 1.25 MeV on the characteristics of silicon complementary bipolar transistors (BTs) and a wide-band operational amplifier (OA) has been studied. It is established that an action of F E = 3×1014 el/cm2 electron fluence causes a decay in the common–emitter current gain (ß) of 61% for NPN and 66% for PNP transistors, as well as a decrease in the maximum value of the transition frequency (f T) of 12% for NPN and by 4% for PNP transistors. When the absorbed dose D G amounts to 3 Mrad, a decrease in ß by 39% for NPN and by 44% for PNP transistors, and in f T of 10% for NPN and 11% for PNP transistors is observed. Despite the substantial decay in ß of transistors, the OA circuitry provided the retention of the operation speed and a small decrease in the offset voltage (about 1.5 mV) in the irradiation range mentioned. The circuitries of OA cascades and the experimental characteristics of the BTs and OAs are presented.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 23, 2016

References

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