Influence of graphene growth temperature by chemical vapour deposition on the hydrogen response of palladium–graphene junction

Influence of graphene growth temperature by chemical vapour deposition on the hydrogen response... The hydrogen sensing by palladium-graphene junction was dependent on the atmospheric pressure chemical vapour deposition growth temperature of the graphene films. The growth temperature window adopted in this study was 900–1000 °C, and the hydrogen sensor performance of the palladium–graphene junction (0.5–2.0% H2 in air) was studied in the temperature range 30–150 °C. Raman spectroscopy study with the as grown graphene films revealed the multilayer nature and the Pd–graphene planar structure showed a temperature dependent n- to p-type conductivity change in presence of hydrogen. Such a conductivity transition in presence of a reducing gas like hydrogen was experimentally studied in detail, and the hydrogen sensor results were correlated with the multilayer character of the graphene thin film, which induces hydrogen intercalation between the graphene layers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Influence of graphene growth temperature by chemical vapour deposition on the hydrogen response of palladium–graphene junction

Influence of graphene growth temperature by chemical vapour deposition on the hydrogen response of palladium–graphene junction

J Mater Sci: Mater Electron (2017) 28:13217–13228 DOI 10.1007/s10854-017-7157-2 Influence of graphene growth temperature by chemical vapour deposition on the hydrogen response of palladium–graphene junction 1,2 2 3 1 1 D. Dutta  · J. Das  · S. K. Hazra  · C. K. Sarkar  · S. Basu   Received: 6 March 2017 / Accepted: 15 May 2017 / Published online: 19 May 2017 © Springer Science+Business Media New York 2017 Abstract The hydrogen sensing by palladium-graphene features of graphene enable precise detection of gases junction was dependent on the atmospheric pressure chemi- with very low concentrations. Chemical vapour deposi- cal vapour deposition growth temperature of the graphene tion (CVD) is a convenient method to produce graphene films. The growth temperature window adopted in this in large scale with good layer characteristics for chemical study was 900–1000 °C, and the hydrogen sensor perfor- gas sensor applications. The gas response mechanism of mance of the palladium–graphene junction (0.5–2.0% H graphene based sensor devices is somewhat different from in air) was studied in the temperature range 30–150 °C. the metal-oxide based gas sensors. Besides the oxidising Raman spectroscopy study with the as grown graphene and reducing features of the target gas molecules during films revealed the multilayer nature and the Pd–graphene sensing the graphene films have certain other factors that planar structure showed a temperature dependent n- to make it attractive for chemical and bio-sensors. Of all the p-type conductivity change in presence of hydrogen. Such methods that have been previously employed to induce the a conductivity transition in presence of a reducing gas like n-type and p-type behaviour of graphene film, doping is a hydrogen was experimentally studied in detail, and the convenient...
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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media New York
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-7157-2
Publisher site
See Article on Publisher Site

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