Influence of doping the base surface on parameters of a bipolar dual-collector lateral magnetotransistor

Influence of doping the base surface on parameters of a bipolar dual-collector lateral... The effect of sensitivity inversion of magnetotransistors is studied using an instrument-technological simulation. The comparison of simulation results and experimental data enabled us to determine relations between sensitivity signs and distributions of injected charge carrier flows in structures of bipolar dual-collector lateral n-p-n magnetotransistors, the base of which is a diffused well (3CBMTBW). It is determined that the 3CBMTBW magnetotransistor with a small surface recombination velocity at the silicon-silicon dioxide boundary and with extraction of injected electrons by a base-well (substrate) p-n junction that is distant from the surface enables us to obtain a high sensitivity of 11 V/T at a good reproducibility and stability of parameters. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of doping the base surface on parameters of a bipolar dual-collector lateral magnetotransistor

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713030037
Publisher site
See Article on Publisher Site

Abstract

The effect of sensitivity inversion of magnetotransistors is studied using an instrument-technological simulation. The comparison of simulation results and experimental data enabled us to determine relations between sensitivity signs and distributions of injected charge carrier flows in structures of bipolar dual-collector lateral n-p-n magnetotransistors, the base of which is a diffused well (3CBMTBW). It is determined that the 3CBMTBW magnetotransistor with a small surface recombination velocity at the silicon-silicon dioxide boundary and with extraction of injected electrons by a base-well (substrate) p-n junction that is distant from the surface enables us to obtain a high sensitivity of 11 V/T at a good reproducibility and stability of parameters.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 13, 2013

References

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