Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method

Influence of conditions of growth on the structural perfection of AlN layers obtained by the... The influence of buffer layers formed at different temperatures and ratios of elements of groups V and III (V/III) on crystalline perfection of epitaxial layers AlN grown using the MOS-Hydride Epitaxy Method on the templates α-Al2O3 is considered. It is shown that the most efficient method to increase the structural perfection of epitaxial layers is use of the high-temperature buffer layer on a low V/III ratio. Further improvement of the quality of AlN layers is possible due to the reduction of parasitic reactions between ammonia and trimethylaluminum in the gas phase by means of optimization of the gas flow through the reactor. The specified values of the growth parameters permitted obtaining the AlN layers of the high crystalline perfection (half-width of X-ray swing curves for reflections (0002), (0004) and $(10\bar 13)$ made asec of 50, 97 and 202, respectively) with a good root-mean-square roughness of the surface of 0.7 nm applicable for the creation of instruments based thereon. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714080095
Publisher site
See Article on Publisher Site

Abstract

The influence of buffer layers formed at different temperatures and ratios of elements of groups V and III (V/III) on crystalline perfection of epitaxial layers AlN grown using the MOS-Hydride Epitaxy Method on the templates α-Al2O3 is considered. It is shown that the most efficient method to increase the structural perfection of epitaxial layers is use of the high-temperature buffer layer on a low V/III ratio. Further improvement of the quality of AlN layers is possible due to the reduction of parasitic reactions between ammonia and trimethylaluminum in the gas phase by means of optimization of the gas flow through the reactor. The specified values of the growth parameters permitted obtaining the AlN layers of the high crystalline perfection (half-width of X-ray swing curves for reflections (0002), (0004) and $(10\bar 13)$ made asec of 50, 97 and 202, respectively) with a good root-mean-square roughness of the surface of 0.7 nm applicable for the creation of instruments based thereon.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 26, 2014

References

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