The microhardness of silicon wafers containing stacking faults is investigated experimentally. The main findings are as follows: (1) Fast-diffusing background impurities (Fe, Au, Ni, Cu, etc.) make for the formation of these defects. (2) Stacking faults are manifested in a bimodal statistical distribution of microhardness made up of two normal distributions. (3) Wafer areas with stacking faults are characterized by higher microhardness.
Russian Microelectronics – Springer Journals
Published: Mar 21, 2006
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