Influence of background impurities on the formation of stacking faults in silicon wafers

Influence of background impurities on the formation of stacking faults in silicon wafers The microhardness of silicon wafers containing stacking faults is investigated experimentally. The main findings are as follows: (1) Fast-diffusing background impurities (Fe, Au, Ni, Cu, etc.) make for the formation of these defects. (2) Stacking faults are manifested in a bimodal statistical distribution of microhardness made up of two normal distributions. (3) Wafer areas with stacking faults are characterized by higher microhardness. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Influence of background impurities on the formation of stacking faults in silicon wafers

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739706020053
Publisher site
See Article on Publisher Site

Abstract

The microhardness of silicon wafers containing stacking faults is investigated experimentally. The main findings are as follows: (1) Fast-diffusing background impurities (Fe, Au, Ni, Cu, etc.) make for the formation of these defects. (2) Stacking faults are manifested in a bimodal statistical distribution of microhardness made up of two normal distributions. (3) Wafer areas with stacking faults are characterized by higher microhardness.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 21, 2006

References

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