Industrial prospects of Pb1 − x Sn x Te:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range

Industrial prospects of Pb1 − x Sn x Te:In with x > 0.3 solid solutions for photodetectors with... Photoelectric properties of Pb1 − x Sn x Te:In films with composition x > 0.3 in the temperature range from 4.2 to 80 K have been investigated. High sample sensitivity to black-body radiation has been discovered at the temperature of helium, and as the temperature of the radiation source decreases the sensitivity increases, which can be connected with the optical-frequency transition in the short-wavelength infrared and terahertz spectral range. The detectivity value D* = 8.2 × 1016 cm · Hz1/2/W corresponding to the NEP = 3.1 × 10−18 W/Hz1/2, has been obtained at detector temperature 4.2 K and T BBR = 15 K. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Industrial prospects of Pb1 − x Sn x Te:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range

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Publisher
Springer Journals
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713020029
Publisher site
See Article on Publisher Site

Abstract

Photoelectric properties of Pb1 − x Sn x Te:In films with composition x > 0.3 in the temperature range from 4.2 to 80 K have been investigated. High sample sensitivity to black-body radiation has been discovered at the temperature of helium, and as the temperature of the radiation source decreases the sensitivity increases, which can be connected with the optical-frequency transition in the short-wavelength infrared and terahertz spectral range. The detectivity value D* = 8.2 × 1016 cm · Hz1/2/W corresponding to the NEP = 3.1 × 10−18 W/Hz1/2, has been obtained at detector temperature 4.2 K and T BBR = 15 K.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 13, 2013

References

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