This paper summarizes experimental results on MBE-grown InAs/Si-based quantum-size quantum-dot heterostructures fabricated in the Institute of Analytical Instrument Making, Russian Academy of Sciences, and the Ioffe Physicotechnical Institute, Russian Academy of Sciences. The structures were examined by the reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) methods, as well as by STM, SEM, and TEM techniques. The aim of works under way is to integrate III–V and silicon technologies for the production of new-generation optoelectronic and microelectronic devices.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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