InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic and Microelectronic Devices

InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic and Microelectronic... This paper summarizes experimental results on MBE-grown InAs/Si-based quantum-size quantum-dot heterostructures fabricated in the Institute of Analytical Instrument Making, Russian Academy of Sciences, and the Ioffe Physicotechnical Institute, Russian Academy of Sciences. The structures were examined by the reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) methods, as well as by STM, SEM, and TEM techniques. The aim of works under way is to integrate III–V and silicon technologies for the production of new-generation optoelectronic and microelectronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic and Microelectronic Devices

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Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1009481810935
Publisher site
See Article on Publisher Site

Abstract

This paper summarizes experimental results on MBE-grown InAs/Si-based quantum-size quantum-dot heterostructures fabricated in the Institute of Analytical Instrument Making, Russian Academy of Sciences, and the Ioffe Physicotechnical Institute, Russian Academy of Sciences. The structures were examined by the reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) methods, as well as by STM, SEM, and TEM techniques. The aim of works under way is to integrate III–V and silicon technologies for the production of new-generation optoelectronic and microelectronic devices.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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