This paper is the final part of a review of which parts I–III were published in Mikroelektronika, 2001, vol. 30, nos. 2, 3, and 5, respectively. The control of plasma processes on the basis of the real-time characterization of the plasma and the wafer surface is discussed. The research on the interpretation of in situdata at high noise levels is reviewed. The architecture, modeling, and simulation of plasma-reactor controllers are covered. The progress in spatially resolved plasma characterization, including recent advances in computerized emission tomography, is surveyed from the standpoint of the optimization of plasma sources and fabrication processes in the microelectronic industry.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.
Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.
All the latest content is available, no embargo periods.
“Hi guys, I cannot tell you how much I love this resource. Incredible. I really believe you've hit the nail on the head with this site in regards to solving the research-purchase issue.”Daniel C.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud
“I must say, @deepdyve is a fabulous solution to the independent researcher's problem of #access to #information.”@deepthiw
“My last article couldn't be possible without the platform @deepdyve that makes journal papers cheaper.”@JoseServera