The necessity of in situmonitoring plasma processes in present-day microelectronics stems from the fact that they must provide high precision. New-generation micro- and nanodevices, which will have sharp interfaces and atomic-level sizes, demand continuous monitoring of process stages. Preference should be given to built-in monitoring facilities, which exploit highly sensitive physical effects and do not disturb particle fluxes from a plasma to a substrate. Part I covers advanced diagnostic and monitoring methods, as applied to plasmochemical processes used in microelectronics, with emphasis to optical spectral techniques. They are based on in-process measuring volume (nonlocal) parameters of a reactive plasma. Processes monitored may include etching and deposition of semiconductor, metal, and insulating layers, as well as resist stripping and surface cleaning.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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