In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects. Part I.

In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate... The necessity of in situmonitoring plasma processes in present-day microelectronics stems from the fact that they must provide high precision. New-generation micro- and nanodevices, which will have sharp interfaces and atomic-level sizes, demand continuous monitoring of process stages. Preference should be given to built-in monitoring facilities, which exploit highly sensitive physical effects and do not disturb particle fluxes from a plasma to a substrate. Part I covers advanced diagnostic and monitoring methods, as applied to plasmochemical processes used in microelectronics, with emphasis to optical spectral techniques. They are based on in-process measuring volume (nonlocal) parameters of a reactive plasma. Processes monitored may include etching and deposition of semiconductor, metal, and insulating layers, as well as resist stripping and surface cleaning. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospects. Part I.

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1009430025956
Publisher site
See Article on Publisher Site

Abstract

The necessity of in situmonitoring plasma processes in present-day microelectronics stems from the fact that they must provide high precision. New-generation micro- and nanodevices, which will have sharp interfaces and atomic-level sizes, demand continuous monitoring of process stages. Preference should be given to built-in monitoring facilities, which exploit highly sensitive physical effects and do not disturb particle fluxes from a plasma to a substrate. Part I covers advanced diagnostic and monitoring methods, as applied to plasmochemical processes used in microelectronics, with emphasis to optical spectral techniques. They are based on in-process measuring volume (nonlocal) parameters of a reactive plasma. Processes monitored may include etching and deposition of semiconductor, metal, and insulating layers, as well as resist stripping and surface cleaning.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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