In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III

In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate... Techniques to monitor plasma processing by the real-time inspection of the wafer surface are reviewed. The focus is on optical probing, since this strategy is the most suitable for plasma reactors. The in situinspection of wafer patterns by interferometry and single-wavelength and spectroscopic ellipsometry is analyzed. Much attention is given to measurements of wafer temperature in real time. The advantages and disadvantages of various approaches to the monitoring of plasma patterning are shown. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011947427160
Publisher site
See Article on Publisher Site

Abstract

Techniques to monitor plasma processing by the real-time inspection of the wafer surface are reviewed. The focus is on optical probing, since this strategy is the most suitable for plasma reactors. The in situinspection of wafer patterns by interferometry and single-wavelength and spectroscopic ellipsometry is analyzed. Much attention is given to measurements of wafer temperature in real time. The advantages and disadvantages of various approaches to the monitoring of plasma patterning are shown.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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