Techniques to monitor plasma processing by the real-time inspection of the wafer surface are reviewed. The focus is on optical probing, since this strategy is the most suitable for plasma reactors. The in situinspection of wafer patterns by interferometry and single-wavelength and spectroscopic ellipsometry is analyzed. Much attention is given to measurements of wafer temperature in real time. The advantages and disadvantages of various approaches to the monitoring of plasma patterning are shown.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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