In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Prospects. Part II

In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Prospects.... In the second part of the review, we pursue our analysis of plasma process monitoring by measuring the physical and physicochemical properties of a plasma during the process. Mass spectrometry methods, as well as probe and microwave techniques, for diagnostics of a plasma used in etching and deposition of semiconductor and insulating micro- and nanolayers are considered. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

In situ Diagnostics of Plasma Processes in Microelectronics: The Current Status and Prospects. Part II

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Publisher
Springer-Verlag
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011352908277
Publisher site
See Article on Publisher Site

Abstract

In the second part of the review, we pursue our analysis of plasma process monitoring by measuring the physical and physicochemical properties of a plasma during the process. Mass spectrometry methods, as well as probe and microwave techniques, for diagnostics of a plasma used in etching and deposition of semiconductor and insulating micro- and nanolayers are considered.

Journal

Russian MicroelectronicsSpringer Journals

Published: Aug 1, 2014

References

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