In Celebration of the 70th Birthday of Igor G. Neizvestny

In Celebration of the 70th Birthday of Igor G. Neizvestny Russian Microelectronics, Vol. 31, No. 2, 2002, p. 69. Translated from Mikroelektronika, Vol. 31, No. 2, 2002, p. 83. Original Russian Text Copyright © 2002 by the Editorial Board. PERSONALIA In Celebration of the 70th Birthday of Igor G. Neizvestny entist, a manager, and an educator, he has been a suc- cess in fields as diverse as prioritizing lines of research, managing the construction of the research facility, pro- viding equipment for its laboratory and service units, selecting specialists, and placing them into a stimulat- ing environment. In 1970, he was awarded the Order of Red Banner of Labor for his outstanding contribution to the construction of a uniquely designed temperature- controlled building at ISP. Neizvestny has published more than 130 technical works. His activities in the physics of semiconductor surfaces and multilayer-heterostructure interfaces are widely appreciated. In 1995, Neizvestny and his associates were awarded the Russian Federation’s State Prize for Sci- ence and Technology for the discovery and the experi- mental and theoretical investigation of a new class of photosensitive semiconductor materials. Neizvestny is active in the editorial boards of tech- nical journals, scientific councils, and panels. He is the leader of research projects sponsored by the Russian Foundation for Basic Research and the Russian Feder- November 26, 2001, was the 70th birthday of Igor ation’s Ministry of Industry, Science, and Technolo- Georgievich Neizvestny, corresponding member of the gies. In addition, he heads the Microelectronics and Russian Academy of Sciences (RAS). Semiconductor-Devices Department, a unit of Novosi- Neizvestny is a prominent Russian researcher in the birsk State Technical University on the premises of ISP. physics, materials science, and technology of semicon- For many years, he has delivered a course of lectures on ductors. He has been research deputy director of the the fundamentals of high-speed micro- and nanoelec- RAS Institute of Semiconductor Physics (ISP) in Novosibirsk since 1962. tronics. Having received a degree in the Physics of Semicon- Currently, the research run by Neizvestny includes ductors and Dielectrics from the Moscow Power Insti- the simulation of molecular-beam epitaxy, the imple- tute, Neizvestny worked under Academician A.V. Rzha- mentation and characterization of quantum dots, and nov at the Semiconductor-Physics Laboratory of the Lebedev Physical Institute in Moscow for seven years. the development of physical concepts for components Afterward, Rzhanov offered him the leading position at of the quantum computer. the newly established institute in Novosibirsk. We, your friends and colleagues, congratulate It is impossible to exaggerate the role that Neiz- you—Igor Georgievich—on the occasion of your 70th vestny has played in the progress of ISP for almost 40 years. Endowed with extraordinary abilities as a sci- birthday and wish you many new accomplishments. 1063-7397/02/3102-0069$27.00 © 2002 MAIK “Nauka / Interperiodica” http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

In Celebration of the 70th Birthday of Igor G. Neizvestny

Russian Microelectronics , Volume 31 (2) – Oct 13, 2004
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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1017496006676
Publisher site
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