Russian Microelectronics, Vol. 33, No. 5, 2004, pp. 261–262. Translated from Mikroelektronika, Vol. 33, No. 5, 2004, pp. 323–324. Original Russian Text Copyright © 2004 by the Editorial Board. PERSONALIA In Celebration of Tatevos M. Agakhanyan’s 80th Birthday After the war, Agakhanyan enrolled in the Engineer- ing Physics Faculty of the Moscow Power Institute before the faculty became part of the Moscow Institute of Engineering Mechanics, now known as the Moscow Institute of Engineering Physics (MIEP). He was granted his ﬁrst degree in electronics, with a distinc- tion, in 1952 and his candidate’s degree in 1957, from the MIEP. Since those years, his activities have been associ- ated with the Electronics Department, which he headed for 26 years from 1965. It is no exaggeration to say that he formed one of the most authoritative and largest departments of the MIEP. His doctoral disser- tation on switching devices, defended in 1967, was an impressive contribution to the theory of transistors and transistor circuits. Agakhanyan has dedicated himself to a life of sci- ence. He is a recognized expert on the physics of tran- sistors, the theory and applications of ampliﬁers and pulse circuits, and ionizing-radiation effects on elec- tronics. His
Russian Microelectronics – Springer Journals
Published: Oct 19, 2004
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