Experiments on low-energy (0.2–0.8 keV) boron implantation into silicon from a low-pressure high-density rf induction discharge plasma were performed. Secondary ion mass spectrometry measurements showed that a boron-implanted layer thickens with ion energy. The creation of an ultrashallow boron-doped silicon layer is a possibility when the accelerating voltage depends on the self-bias potential arising upon applying an rf voltage to the substrate.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud