Experiments on low-energy (0.2–0.8 keV) boron implantation into silicon from a low-pressure high-density rf induction discharge plasma were performed. Secondary ion mass spectrometry measurements showed that a boron-implanted layer thickens with ion energy. The creation of an ultrashallow boron-doped silicon layer is a possibility when the accelerating voltage depends on the self-bias potential arising upon applying an rf voltage to the substrate.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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