Hybrid gallium nitride/organic heterojunction with improved electrical properties for optoelectronic applications

Hybrid gallium nitride/organic heterojunction with improved electrical properties for... The rectifying behavior and performance parameters of a hybrid organic/inorganic poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/Si-doped GaN layer (PEDOT:PSS/Si:GaN) are studied. The characteristics of both organic and inorganic layers have been individually examined, and a heterojunction between the same has been realized. AFM studies on optimized samples reveal low surface roughness (~ 3.7 nm), and cross-sectional scanning electron microscopy images reveal uniform deposition of PEDOT:PSS layer over Si:GaN. The optimized heterojunction (thickness ~ 600 nm) presents a threshold voltage ~ 0.4 V with a rectifying behavior and a low ideality factor (n ~ 1.6) as compared to most of the related hybrid heterojunctions reported. The low ideality factor also points toward reduced trap-assisted tunneling and current leakage. A detailed comparison of heterojunction parameters including barrier height (Φ B) of the samples and ideality factor is also presented. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Springer Journals

Hybrid gallium nitride/organic heterojunction with improved electrical properties for optoelectronic applications

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics
ISSN
0022-2461
eISSN
1573-4803
D.O.I.
10.1007/s10853-018-2408-z
Publisher site
See Article on Publisher Site

Abstract

The rectifying behavior and performance parameters of a hybrid organic/inorganic poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/Si-doped GaN layer (PEDOT:PSS/Si:GaN) are studied. The characteristics of both organic and inorganic layers have been individually examined, and a heterojunction between the same has been realized. AFM studies on optimized samples reveal low surface roughness (~ 3.7 nm), and cross-sectional scanning electron microscopy images reveal uniform deposition of PEDOT:PSS layer over Si:GaN. The optimized heterojunction (thickness ~ 600 nm) presents a threshold voltage ~ 0.4 V with a rectifying behavior and a low ideality factor (n ~ 1.6) as compared to most of the related hybrid heterojunctions reported. The low ideality factor also points toward reduced trap-assisted tunneling and current leakage. A detailed comparison of heterojunction parameters including barrier height (Φ B) of the samples and ideality factor is also presented.

Journal

Journal of Materials ScienceSpringer Journals

Published: May 14, 2018

References

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