The relationship between the concentrations of nonequilibrium defects that appear during the operation of a light-emitting diodes based on AlGaN/InGaN/GaN and AlInGaP heterostructures with quantum wells, the time of the current flow, and electric modes is determined. Experimental results confirming this relationship is obtained.
Russian Microelectronics – Springer Journals
Published: Dec 9, 2011
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