How the edge permeability of a 2D island influences the transition from 2D to 3D growth

How the edge permeability of a 2D island influences the transition from 2D to 3D growth In the context of the simple growth model of two level pyramids consisting of 2D islands, we examine the incipient transition from 2D to 3D growth. It is shown that the characteristic time of transition to 3D growth can depend nonmonotonically on temperature. Under high temperatures, the formation of 3D islands is caused by atoms detaching from the edge of a 2D island to its surface. Under low temperatures, 3D-island formation is caused by adsorbed atom transition from the initial surface over the edge of a 2D island, without visiting the position in the kink. The last mechanism takes place under the weak migration of the adsorbed atoms along an island edge, if the Schwoebel barrier and potential well for the adsorbed atom on the 2D-island surface relative to the initial surface are present. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

How the edge permeability of a 2D island influences the transition from 2D to 3D growth

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711080087
Publisher site
See Article on Publisher Site

Abstract

In the context of the simple growth model of two level pyramids consisting of 2D islands, we examine the incipient transition from 2D to 3D growth. It is shown that the characteristic time of transition to 3D growth can depend nonmonotonically on temperature. Under high temperatures, the formation of 3D islands is caused by atoms detaching from the edge of a 2D island to its surface. Under low temperatures, 3D-island formation is caused by adsorbed atom transition from the initial surface over the edge of a 2D island, without visiting the position in the kink. The last mechanism takes place under the weak migration of the adsorbed atoms along an island edge, if the Schwoebel barrier and potential well for the adsorbed atom on the 2D-island surface relative to the initial surface are present.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 9, 2011

References

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