Highly efficient colloid–solution deposition planarization of Hastelloy substrate for IBAD-MgO film

Highly efficient colloid–solution deposition planarization of Hastelloy substrate for IBAD-MgO... A simple and efficient way to planarize Hastelloy substrate for high-temperature superconductors has been developed. The colloid–solution deposition planarization (CSDP) method consists of two steps: colloid deposition planarization and subsequent precursor solution deposition planarization. The surface roughness of Hastelloy belt decreased from 4.0 to 0.8 nm after Y2O3 colloid deposition and then to 0.3 nm after further yttrium acetate solution deposition. The shrinkage percentage of the colloid deposition layer and solution deposition layer was 20 and 77 %, respectively. Compared with traditional solution deposition planarization, the higher planarization efficiency of CSDP can be attributed to the lower shrinkage percentage of the colloid deposition layer. As a result, ion-beam-assisted deposition (IBAD)-MgO on Hastelloy substrate with CSDP coating showed crystal orientation. Hastelloy belt planarized by the CSDP method will provide a low-cost substrate for high-temperature superconductors. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Research on Chemical Intermediates Springer Journals

Highly efficient colloid–solution deposition planarization of Hastelloy substrate for IBAD-MgO film

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Springer Science+Business Media Dordrecht
Subject
Chemistry; Catalysis; Physical Chemistry; Inorganic Chemistry
ISSN
0922-6168
eISSN
1568-5675
D.O.I.
10.1007/s11164-015-2314-9
Publisher site
See Article on Publisher Site

Abstract

A simple and efficient way to planarize Hastelloy substrate for high-temperature superconductors has been developed. The colloid–solution deposition planarization (CSDP) method consists of two steps: colloid deposition planarization and subsequent precursor solution deposition planarization. The surface roughness of Hastelloy belt decreased from 4.0 to 0.8 nm after Y2O3 colloid deposition and then to 0.3 nm after further yttrium acetate solution deposition. The shrinkage percentage of the colloid deposition layer and solution deposition layer was 20 and 77 %, respectively. Compared with traditional solution deposition planarization, the higher planarization efficiency of CSDP can be attributed to the lower shrinkage percentage of the colloid deposition layer. As a result, ion-beam-assisted deposition (IBAD)-MgO on Hastelloy substrate with CSDP coating showed crystal orientation. Hastelloy belt planarized by the CSDP method will provide a low-cost substrate for high-temperature superconductors.

Journal

Research on Chemical IntermediatesSpringer Journals

Published: Oct 23, 2015

References

  • Solution deposition planarization of long-length flexible substrates
    Sheehan, C; Jung, Y; Holesinger, T; Feldmann, DM; Edney, C; Ihlefeld, JF; Clem, PG; Matias, V

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