High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2

High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2 A theoretical investigation is carried out into memory cells based on a polysilicon–oxide–nitride–oxide–silicon structure in which a high-permittivity dielectric is used instead of SiO2 as the gate insulator. The dielectric is taken to be Al2O3 or ZrO2. Write/erase (W/E) cycles are simulated numerically. It is shown for the first time that changing to a high-permittivity insulator reduces the unwanted carrier injection from the gate region and allows one to employ lower and/or shorter W/E pulses; specifically, the W/E time can be decreased from 1 ms to 10 μs. It is concluded that high-permittivity insulators might be useful in carrier-trapping EEPROMs and RAMs. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2

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Kluwer Academic Publishers-Plenum Publishers
Copyright © 2003 by MAIK Nauka/Interperiodica
Engineering; Electrical Engineering
Publisher site
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