High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological,... In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10−3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400–800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson–Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V−1 s−1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

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Publisher
Springer US
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
D.O.I.
10.1007/s11664-018-6201-1
Publisher site
See Article on Publisher Site

Abstract

In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10−3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400–800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson–Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V−1 s−1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Mar 9, 2018

References

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