High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface

High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001)... Graphene has attracted intensive attentions due to its significant optoelectronic performances. Photovoltaic effect and photo-thermoelectric effect make graphene to be a hot choice in ultra-wide spectrum band photodetection. Thinking of serious influences such as chemical pollution and mechanical damages of CVD grown and exfoliated graphene caused by transfer and exfoliation processes, the epitaxial graphene on SiC single crystal wafer shows intrinsic and better performances. Here, high quality epitaxial graphene has been successfully synthesized by thermal decomposition of Si-terminated, semi-insulating on-axis oriented 4H-SiC (0001) wafer. Photon response of the graphene has been investigated by employing a metal-graphene-metal photodetector. The largest photo-current value obtained under 780 nm laser illumination and 10 V bias voltage is up to 2.2 × 10−7 A, which is almost 30 times greater than the dark current. While under 0.05 mW/cm2 irradiance, the highest values of responsivity and EQE are 4.48 × 10−2 A/W and 8.13%, respectively. This type of fabricated graphene based photodetector has shown steady and outstanding photo detection performances. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8483-0
Publisher site
See Article on Publisher Site

Abstract

Graphene has attracted intensive attentions due to its significant optoelectronic performances. Photovoltaic effect and photo-thermoelectric effect make graphene to be a hot choice in ultra-wide spectrum band photodetection. Thinking of serious influences such as chemical pollution and mechanical damages of CVD grown and exfoliated graphene caused by transfer and exfoliation processes, the epitaxial graphene on SiC single crystal wafer shows intrinsic and better performances. Here, high quality epitaxial graphene has been successfully synthesized by thermal decomposition of Si-terminated, semi-insulating on-axis oriented 4H-SiC (0001) wafer. Photon response of the graphene has been investigated by employing a metal-graphene-metal photodetector. The largest photo-current value obtained under 780 nm laser illumination and 10 V bias voltage is up to 2.2 × 10−7 A, which is almost 30 times greater than the dark current. While under 0.05 mW/cm2 irradiance, the highest values of responsivity and EQE are 4.48 × 10−2 A/W and 8.13%, respectively. This type of fabricated graphene based photodetector has shown steady and outstanding photo detection performances.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Jan 22, 2018

References

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