High-frequency admittance of a thin circular semiconductor wire

High-frequency admittance of a thin circular semiconductor wire The high-frequency admittance of a linear thin semiconductor wire with circular cross section is investigated within classical transport theory. No assumption is made concerning the ratio of the wire radius to the carrier mean free path. Diffuse reflection of carriers from the surface is considered. The admittance is calculated in the case of a nondegenerate electron gas. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

High-frequency admittance of a thin circular semiconductor wire

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739708040045
Publisher site
See Article on Publisher Site

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