High efficiency photoelectrodes based on porous silicon

High efficiency photoelectrodes based on porous silicon Using the por−Si electrodes promotes the separation of water molecules inside por−Si nanopores and efficient emission of hydrogen during water electrolysis. The por−Si/c−Si heterostructure makes it possible to solve the basic problem of water photoelectrolysis on the silicon electrodes—their energetic insufficiency. The combined electrochemical and physical deposition of Ni on the surface of por−Si, the formation of NiSi−silicide coatings on the surface of the pores, and the subsequent production of por−Si photoelectrodes based on the NiSi/por−Si/c−Si/Al heterostructure makes it possible to improve their corrosion resistance to oxidation and anodic dissolution, increase the efficiency of hydrogen emission, and extend the lifetime of photoelectrodes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

High efficiency photoelectrodes based on porous silicon

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971608014X
Publisher site
See Article on Publisher Site

Abstract

Using the por−Si electrodes promotes the separation of water molecules inside por−Si nanopores and efficient emission of hydrogen during water electrolysis. The por−Si/c−Si heterostructure makes it possible to solve the basic problem of water photoelectrolysis on the silicon electrodes—their energetic insufficiency. The combined electrochemical and physical deposition of Ni on the surface of por−Si, the formation of NiSi−silicide coatings on the surface of the pores, and the subsequent production of por−Si photoelectrodes based on the NiSi/por−Si/c−Si/Al heterostructure makes it possible to improve their corrosion resistance to oxidation and anodic dissolution, increase the efficiency of hydrogen emission, and extend the lifetime of photoelectrodes.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 8, 2017

References

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