Growth oxygen-containing defects in silicon grown in a weak vertical magnetic field

Growth oxygen-containing defects in silicon grown in a weak vertical magnetic field Properties of silicon (M-Si) prepared by the Czochralski growth technique in a vertical magnetic field of 0.05 T applied to a melt are studied by measuring IR absorption spectra, microindentation, and selective etching. The effect of increasing the concentration of interstitial oxygen upon the thermal treatment of M-Si is found. It is shown that microhardness of M-Si is higher than that of silicon grown by the traditional Czochralski technique by ∼8%. The features in the behavior of M-Si are attributed to the formation of oxygen-containing defect-impurity complexes during the growth. Upon thermal treatment at 900°C in the hydrogen flow, these complexes decompose with the extraction of interstitial oxygen, which suppresses thermal hardening typical of the silicon single crystals grown by the traditional Czochralski technique. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Growth oxygen-containing defects in silicon grown in a weak vertical magnetic field

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711040044
Publisher site
See Article on Publisher Site

Abstract

Properties of silicon (M-Si) prepared by the Czochralski growth technique in a vertical magnetic field of 0.05 T applied to a melt are studied by measuring IR absorption spectra, microindentation, and selective etching. The effect of increasing the concentration of interstitial oxygen upon the thermal treatment of M-Si is found. It is shown that microhardness of M-Si is higher than that of silicon grown by the traditional Czochralski technique by ∼8%. The features in the behavior of M-Si are attributed to the formation of oxygen-containing defect-impurity complexes during the growth. Upon thermal treatment at 900°C in the hydrogen flow, these complexes decompose with the extraction of interstitial oxygen, which suppresses thermal hardening typical of the silicon single crystals grown by the traditional Czochralski technique.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 14, 2011

References

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