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Growth and Characterization of the Evaporated Quaternary Absorber Cu2FeSnS4 for Solar Cell Applications

Growth and Characterization of the Evaporated Quaternary Absorber Cu2FeSnS4 for Solar Cell... Cu2FeSnS4 (CFTS) was synthesized by direct fusion of high-purity elemental copper, iron, tin and sulfur. CFTS thin films were deposited on glass substrates heated by single source vacuum thermal evaporation, after which the obtained samples were annealed under a sulfur atmosphere in a sealed quartz tube at 400°C for 1 h in order to optimize the CFTS stannite phase. The substrate temperature was varied from room temperature to 200°C. The formation of a stannite structure with (112), (200) and (004) planes in the powder and thin films was confirmed using x-ray diffraction measurements and the crystallites were found to have a preferred orientation along the (112) direction. Optical measurements analysis showed that after the sulfurization process the layers have a relatively high absorption coefficient close to 105 cm−1 in the visible spectrum. The films show a direct optical band gap in the range 1.30–1.63 eV for substrate temperature varied from room temperature to 200°C. All samples revealed p-type conductivity as determined by the hot probe method. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

Growth and Characterization of the Evaporated Quaternary Absorber Cu2FeSnS4 for Solar Cell Applications

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Publisher
Springer Journals
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
DOI
10.1007/s11664-018-6202-0
Publisher site
See Article on Publisher Site

Abstract

Cu2FeSnS4 (CFTS) was synthesized by direct fusion of high-purity elemental copper, iron, tin and sulfur. CFTS thin films were deposited on glass substrates heated by single source vacuum thermal evaporation, after which the obtained samples were annealed under a sulfur atmosphere in a sealed quartz tube at 400°C for 1 h in order to optimize the CFTS stannite phase. The substrate temperature was varied from room temperature to 200°C. The formation of a stannite structure with (112), (200) and (004) planes in the powder and thin films was confirmed using x-ray diffraction measurements and the crystallites were found to have a preferred orientation along the (112) direction. Optical measurements analysis showed that after the sulfurization process the layers have a relatively high absorption coefficient close to 105 cm−1 in the visible spectrum. The films show a direct optical band gap in the range 1.30–1.63 eV for substrate temperature varied from room temperature to 200°C. All samples revealed p-type conductivity as determined by the hot probe method.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Mar 20, 2018

References