Graphene quantum dot–poly(vinylidene fluoride) composite for the preparation of asymmetric bilayer bending transducer

Graphene quantum dot–poly(vinylidene fluoride) composite for the preparation of asymmetric... A newly developed asymmetric bilayer bending transducer composed of a graphene quantum dot (GQD)–poly(vinylidene fluoride) (PVDF) composite and a simple adhesive tape has been investigated. This bending transducer displays high actuation displacement (10.2 mm) and large electromechanical strain (0.3%) under relatively low electric field strength (20.8 MV m−1). The key to the high electromechanical performance lies in the unique GQD–PVDF interfacial structure and the high dielectric constant of GQD–PVDF (2350 at 1 Hz, 1% GQD weight percentage) caused by the interfacial polarization effect. The good electromechanical performance of our device shows bright prospect of GQD in smart materials field. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Graphene quantum dot–poly(vinylidene fluoride) composite for the preparation of asymmetric bilayer bending transducer

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8485-y
Publisher site
See Article on Publisher Site

Abstract

A newly developed asymmetric bilayer bending transducer composed of a graphene quantum dot (GQD)–poly(vinylidene fluoride) (PVDF) composite and a simple adhesive tape has been investigated. This bending transducer displays high actuation displacement (10.2 mm) and large electromechanical strain (0.3%) under relatively low electric field strength (20.8 MV m−1). The key to the high electromechanical performance lies in the unique GQD–PVDF interfacial structure and the high dielectric constant of GQD–PVDF (2350 at 1 Hz, 1% GQD weight percentage) caused by the interfacial polarization effect. The good electromechanical performance of our device shows bright prospect of GQD in smart materials field.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Jan 2, 2018

References

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