ISSN 1063-7397, Russian Microelectronics, 2017, Vol. 46, No. 3, pp. 192–199. © Pleiades Publishing, Ltd., 2017.
Original Russian Text © A.I. Vlasov, D.S. Terent’ev, V.A. Shakhnov, 2017, published in Mikroelektronika, 2017, Vol. 46, No. 3, pp. 210–218.
Graphene Flexible Touchscreen
with Integrated Analog-Digital Converter
A. I. Vlasov, D. S. Terent’ev, and V. A. Shakhnov*
Bauman Moscow State Technical University, Moscow, 105005 Russia
Received July 27, 2016
Abstract⎯The possibilities of developing a projection-capacitance touchscreen which aligns sensors and an
analog-digital converter produced from the material based on graphene have been considered. The alignment
of these two elements will make it possible to implement a touchscreen with digital signals at the output con-
tacts which will make it possible to connect it to the integrated logical circuits of the control system. The
touchscreen is a film with a thickness of 100–150 micrometers with alternating graphene layers, which trans-
mit 6–8% more light than a projection-capacitance screen from indium and stanum oxides. The screen is
highly flexible, is mechanically hard, and the materials—saccharose, copper foil, boron nitride (BN), etc.—
used to fabricate it potentially cost less. This is achieved by the application of a complex of the known methods
used to obtain films from two-dimensional materials based on graphene of a preset configuration on flexible
polymer substrates and a single construction of the system for electrical capacitance accumulation in a touch-
screen and analog-digital conversion on graphene field-effect transistors.
The widespread use of information input–output
devices in scientific studies, industry, and measuring
and domestic appliances has encouraged developers to
search for new and effective materials for their design.
The materials based on silicon and its compounds are
the most available, efficient, and well-elaborated
materials; however, the characteristics of the input–
output devices based on them no longer entirely satisfy
The materials based on indium, stanum, and other
metals possess better characteristics than silicon. For
them a high degree of light transmission (up to 90%)
and electroconductivity are typical; however, their
application is limited by their substantial cost. More-
over, the reserves of rare-earth metals are rather lim-
Among the materials considered promising for
developing modern means of inputting sensor infor-
mation and depicting information, a special place
belongs to the materials based on graphene . In this
case, the property of graphene to vary electroconduc-
tivity by a relatively small mechanical impact is used.
This property of graphene makes it possible to form a
coordinate grid from highly sensitive graphene ele-
ments, a short reaction time under specific conditions,
and a high value of light transmission. These qualities
of the graphene elements allow them to successfully
compete with conventional matrices of condensers
and grids of horizontal and vertical electrodes from the
films of indium oxide with a thickness of several
micrometers, etc. .
The analog–digital converters (ADCs) are also
included in the complex of the touchscreen, along
with the sensors, which, as a rule, are built according
to the scheme of comparators based on transistors. By
forming the transistors from graphene, the possibility
arises for integrating a graphene ADC and a graphene
touchscreen, which makes it possible to significantly
increase the screen’s reliability, simplify the technol-
ogy of its fabrication, and reduce its cost.
Several methods are known concerning the forma-
tion of transistor structures from graphene. The first
method consists in the creation of graphene regions
with two types of conductivity by plasmon doping .
The second technology is a tunneling field-effect tran-
sistor (TFET), which envisages the use a layer of
boron nitride (BN) as a dielectric (Fig. 1) [5, 6].
Both technologies have the advantage of lower
energy consumption than the analog and MOSFET
transistors made from silicon. Their disadvantage is
that the bandgap width is one-quaerter the width in
silicon, which limits the application of such transistors
The third technology is a double gate tunneling
field-effect transistor (DGTFET), which uses two
platinum and silicon gates, the upper one being sepa-
rated from the channel by disulfide of tungsten  or