Good electrical performances and impedance analysis of (1−x)KNN–xBMM lead-free ceramics

Good electrical performances and impedance analysis of (1−x)KNN–xBMM lead-free ceramics (1 − x)(K0.5Na0.5)NbO3–xBi(Mg0.75Mo0.25)O3 [(1 − x)KNN–xBMM] (x = 0.005, 0.01, 0.02) ceramics were prepared via a solid-state reaction method. X-ray diffraction patterns (XRD) and Raman spectrum showed that a solid solution was formed between the BMM and KNN, which improved the electrical properties of KNN. With increasing the BMM content, the grain firstly increased and then decreased. When x = 0.01, the ceramics exhibited the optimized microstructure, indicating that there exits an optimal doping component. Temperature dependence of relative permittivity also increases firstly and then decreases. The relative permittivity (εr) of ~ 1418 in stabilization zone, εmax ~ 4861 at the Curie temperature T C ~ 394 °C, good temperature stability ∆ε/ε123 °C ≤ ± 15% from 123 °C to 348 °C, and the dielectric loss tanδ ≤ 0.036 from 109 to 348 °C were obtained for 0.99KNN-0.01BMM ceramics. Conductivity behavior of the (1 − x)KNN–xBMM was investigated as a function of temperature from 420 to 520 °C and frequency from 40 to 106 Hz, showing that the basic mechanisms of conduction and relaxation processes were thermally activated, and oxygen vacancies were the possible ionic charge transport carriers at higher temperatures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Good electrical performances and impedance analysis of (1−x)KNN–xBMM lead-free ceramics

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8403-3
Publisher site
See Article on Publisher Site

Abstract

(1 − x)(K0.5Na0.5)NbO3–xBi(Mg0.75Mo0.25)O3 [(1 − x)KNN–xBMM] (x = 0.005, 0.01, 0.02) ceramics were prepared via a solid-state reaction method. X-ray diffraction patterns (XRD) and Raman spectrum showed that a solid solution was formed between the BMM and KNN, which improved the electrical properties of KNN. With increasing the BMM content, the grain firstly increased and then decreased. When x = 0.01, the ceramics exhibited the optimized microstructure, indicating that there exits an optimal doping component. Temperature dependence of relative permittivity also increases firstly and then decreases. The relative permittivity (εr) of ~ 1418 in stabilization zone, εmax ~ 4861 at the Curie temperature T C ~ 394 °C, good temperature stability ∆ε/ε123 °C ≤ ± 15% from 123 °C to 348 °C, and the dielectric loss tanδ ≤ 0.036 from 109 to 348 °C were obtained for 0.99KNN-0.01BMM ceramics. Conductivity behavior of the (1 − x)KNN–xBMM was investigated as a function of temperature from 420 to 520 °C and frequency from 40 to 106 Hz, showing that the basic mechanisms of conduction and relaxation processes were thermally activated, and oxygen vacancies were the possible ionic charge transport carriers at higher temperatures.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 18, 2017

References

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